High-Power MOSFET and IBGT Transistors Test System
Overview
The system is designed to measure static and dynamic parameters of high-power MOSFET and IGBT transistors; measuring system self-test; measuring system self-calibration.
The system is based on the NI PXI platform and a third-party signal power amplifier. The software is developed in the NI LabVIEW graphical programming environment. The software has an easy-to-use and intuitive user interface.
Measurements
IGBT transistors:
  1. Collector-emitter breakdown voltage
  2. Collector-emitter cutoff current
  3. Gate-emitter leakage current
  4. Collector-emitter saturation voltage
  5. Gate-emitter threshold voltage
  6. Input, output, and transfer capacitances
  7. Gate charge, gate-emitter charge, gate-collector charge
  8. Delay, rise, fall, discharge times

MOSFET transistors :
  1. Gate leakage current
  2. Residual drain current
  3. Initial drain current
  4. Drain-source breakdown voltage
  5. Threshold voltage
  6. ON resistance
  7. Differential transconductance
  8. Gate charge, gate-source charge, gate-drain charge
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